Said, Said2020-04-202020-04-202016Said, S. (2016) Investigation on structural, optical and electrical properties of magnesium doped zinc oxide thin films prepared by dc magnetron sputtering, Master dissertation, University of Dar es Salaam, Dar es Salaamhttp://41.86.178.5:8080/xmlui/handle/123456789/9633Available in print form, East Africana Collection, Dr. Wilbert Chagula Library, Class mark (THS EAF QC176.8.S72S24)Zinc oxide (ZnO) containing elemental magnesium was investigated using deposition parameters (DC Sputtering power and substrate temperature) and post annealing temperature on the structural, optical and electrical properties of ZnO:Mg thin films. The films surface morphology; grain mean size and maximum cross sectional (grain) height were established using Atomic Force Microscope (AFM) where as transmittance was determined using Lambda 9/19 Spectrophotometer. Electrical parameters such as carrier concentration, hall mobility, film resistivity and electrical conductivity were obtained at room temperature using Ecopia HMS-3000 Hall Effect measurement system employing the Van der Pauw method. AFM images of ZnO:Mg reveal that sputtering power has influence in morphology of the thin films however, image morphology improved when films prepared with increasing substrate temperature and by applying annealing temperature. All ZnO:Mg films had average peak transparency above 85% again as films prepared with sputtering power, substrate temperature and post annealing temperature. Electrical properties of the film were increasing by increasing substrate temperature. The lowest value of electrical resistivity was Ωcm which corresponds to the highest value of electrical conductivity of (Ωcm)-1 at substrate temperature of 450 oC and sputtering power of 100 W. Optical band gap of ZnO:Mg films was in the range of 3.44 – 3.69 eV depending on the variation of substrate temperature.enZinc oxide thin filmsSputtering (Physics)Thesis