Crystal growth and dielectric measurement of KH₂P O₄

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dc.contributor.authorMallango, Edward A. J. S.
dc.date.accessioned2021-02-09T11:36:28Z
dc.date.available2021-02-09T11:36:28Z
dc.date.issued1976
dc.descriptionAvailable in print form, EAF collection, Dr. Wilbert Chagula Library (THS EAF QD 921.M2)en_US
dc.description.abstractGrowth of potassium dihydrogen phosphate (KH₂P O₄) crystals from a saturated solution by a simple temperature decrease method is presented. The temperature dependence of the dielectric constant for a number of specimens are calculated from capacitance measurements is also presented. Both the overall feature of our results and transition temperatures which were within the range of 118.5˚K and 123.5˚K are in good agreement with values found in the literature. Using d.c bias fields, the transition temperature has been observed to shift to lower values. Dielectric measurements obtained in the neighbourhood of the transition temperatures indicate a first order transition in potassium dihydrogen phosphate in agreement with recent findings of other workers.en_US
dc.identifier.citationMallango, Edward A. J. S (1976) Crystal growth and dielectric measurement of KH₂P O₄ ,Masters dissertation, University of Dar es Salaam, Dar es Salaamen_US
dc.identifier.urihttp://41.86.178.5:8080/xmlui/handle/123456789/14691
dc.language.isoenen_US
dc.publisherUniversity of Dar es Salaamen_US
dc.subjectCrystalsen_US
dc.subjectGrowthen_US
dc.subjectPotassium phosphatesen_US
dc.titleCrystal growth and dielectric measurement of KH₂P O₄en_US
dc.typeThesisen_US
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